![]() Khan’s group has focused on the development of UWBG AlGaN channel electronics for high-voltage/high-power applications. Chloe is our Office Manager and Insurance Specialist, as well as a liaison between our office and Carolina UVC which is the largest travel volleyball club. He was a founding member of SETI and Nitek Inc., two South Carolina small businesses which produce and market UVC LEDs.They have now been acquired by Seoul Semiconductor which is a top five global LED manufacturer. His group at UofSC also was the first to fabricate milliwatt power UVC LEDs. They were the first to demonstrate all the key building blocks for GaN power and rf-electronics which currently are commercialized by major industries for Electric Vehicles and other control applications. Khan’s research groups over the years have been pioneers in the development of III-Nitride materials and devices. ![]() He has published over 420 research papers and hold over 50 US/International patents. Khan received the inaugural IEEE Les Eastman Award in 2020, South Carolina Governor’s Award of Excellence in Science and Technology (2015), the best research paper awards of the Japanese Society of Applied Physics (20), DARPA SUVOS Award for UVC LEDs (2003) and is a Fellow of IEEE since 2006. Prior to joining UofSC in 1997, he worked at Honeywell Research Center (1979-1984), Minnesota Manufacturing and Mining Company (3M-1984-1986) and APA Optics (1987-1997).He obtained his PhD from MIT in 1979. Professor Khan is a Carolina Distinguished Professor in the department of Electrical Engineering at the University of South Carolina (UofSC). We will also discuss some of our recent results on the fabrication of high brightness UVC micro-LEDs with pixel sizes below 10 µm diameters. Courtney also serves as the Director of Operations. Recent results from our group on UWBG AlGaN channel depletion and enhancement mode high electron mobility transistors (HEMTs) with gate dielectrics will be presented. Courtney has coached AAU volleyball for two seasons in South Carolina before joining us at Boston UVC. In this presentation we will describe the approaches we have adopted to overcome some of these issues. The UWBG AlGaN layers however pose additional challenges in materials growth, doping and ohmic contact fabrication. These are an ideal platform for growing the epitaxial UWBG AlGaN layers and heterojunctions for the optical and electronic devices. ![]() This, we have overcome by developing a high-temperature low-pressure MOCVD process which yields very high quality AlN/sapphire templates with AlN layer thicknesses from 4-17 µm. One of the challenges in developing UWBG AlGaN device epitaxial structures is the absence of low-cost bulk AlN substrates. It has a direct bandgap in the UVB/UVC part of the spectrum and the breakdown voltage, which scales with the bandgap, can reach values between 7-10 MV/cm. Two sizes available: for 30 goggles or glasses and for 40 goggles or glasses. Includes key lock, 2 keys, 2 safety door switches, pilot light, long-life ultraviolet (UV-C) bulb, and 8-ft power cord. The 15-minute timer lets you control sterilization. Ultrawide bandgap (UWBG) AlxGa1-xN (x>0.4) is an ideal material for UVC LEDs and lasers, and high-voltage/power/frequency devices. Cabinet is safe and easy to use no messy dripping or drying. ![]()
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |